? 2006 ixys all rights reserved ds99582e(04/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 4 a 0.8 ? pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet n-channel enhancement mode avalanche rated ixtp 8n50pm v dss = 500 v i d25 = 4 a r ds(on) 0.8 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c4a i dm t c = 25 c, pulse width limited by t jm 14 a i ar t c = 25 c8a e ar t c = 25 c20mj e as t c = 25 c 400 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 18 ? p d t c = 25 c41w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 4g (electrically isolated tab) g = gate d = drain s = source features l plastic overmolded tab for electrical isolation l international standard package l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density overmolded to-220 (ixtp...m) outline g d s isolated tab preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixtp 8n50pm symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 4 a 5 8 s c iss 1050 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 120 pf c rss 12 pf t d(on) 22 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 8 a 28 ns t d(off) r g = 18 ? (external) 65 ns t f 23 ns q g(on) 20 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 4 a 7 nc q gd 7nc r thjs 3.0 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 8 a i sm repetitive 14 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 3 a, v gs = 0 v, v r = 100 v 400 ns -di/dt = 100 a/ s terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 123 isolated to-220 (ixtp...m) ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineer- ing lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimen- sions without notice.
|
